SSD2504 n-ch enhancement mode power mosfet 5.0a, 100v, r ds(on) 0.22 elektronische bauelemente 11-may-2010 rev. a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a c d n o p g e f h k j m b to-252(d-pack) rohs compliant product a suffix of ?-c? specifies halogen free description the SSD2504 provide the designer with t he best combination of fast switching. the to-252 package is universally preferred for all commercial-industrial surface mount applications. the device is suited for charger, industrial and consumer environment. features ? low on-resistance ? fast switching speed ? low-voltage drive (4v) ? wide soa (safe operating area) ? easily designed drive circuits ? easy to parallel marking absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds 100 v gate-source voltage v gs 20 v continuous drain current i d @t c =25 5.0 a i d @t c =100 3.75 a pulsed drain current 1 i dm 20 a total power dissipation p d @t c =25 20 w linear derating factor 0.16 w / c operating junction and storage temperature range t j , t stg -55 ~ 150 c thermal data maximum thermal resistance junction-ambient a r ja 110 c / w maximum thermal resist ance junction-case r jc 6.25 c / w ref. millimete r ref. millimete r min. max. min. max. a 6.4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1.6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 gate source drain
SSD2504 n-ch enhancement mode power mosfet 5.0a, 100v, r ds(on) 0.22 elektronische bauelemente 11-may-2010 rev. a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. electrical characteristics (t j = 25 c unless otherwise specified) parameter symbol min. typ. max. unit test conditions dran-source breakdown voltage bv dss 100 - - v v gs = 0, i d = 1ma gate-threshold voltage v gs(th) 1.0 - 2.5 v v ds = 10v, i d = 1ma forward transconductance g fs - 4 - s v ds = 10v, i d = 2.5a gate-source leakage current i gss - - 100 na v gs = 20v drain-source leakage current i dss - - 10 a v ds = 100v, v gs = 0v static drain-source on-resistance 2 r ds(on) - - 0.22 ? v gs = 10v, i d = 2.5a - - 0.28 v gs = 4.0v, i d = 2.5a turn-on delay time 2 t d(on) - 9.0 - ns v dd = 30 v i d = 1 a v gs = 10 v r l = 30 ? r g = 6 ? rise time t r - 9.4 - turn-off delay time t d(off) - 26.8 - fall time t f - 2.6 - input capacitance c iss - 975 - pf v gs = 0 v v ds = 25 v f = 1mhz output capacitance c oss - 38 - reverse transfer capacitance c rss - 27 - source-drain diode diode forward voltage 2 v sd - - 1.5 v i s = 5 a, v gs = 0 v notes 1. pulse width limited by maximum junction temperature. 2. pulse width Q 300 s, duty cycle Q 2 .
SSD2504 n-ch enhancement mode power mosfet 5.0a, 100v, r ds(on) 0.22 elektronische bauelemente 11-may-2010 rev. a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
SSD2504 n-ch enhancement mode power mosfet 5.0a, 100v, r ds(on) 0.22 elektronische bauelemente 11-may-2010 rev. a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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